REASUNOS RS2N50C

REASUNOS · FETs & Power MOSFETs · MPN RS2N50C

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Specifications

Gate Charge(Qg)5.6nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)22pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation5W
RDS(on)6.5Ω@10V
Reverse Transfer Capacitance (Crss@Vds)5pF
Number1 N-channel
Input Capacitance(Ciss)151pF

Technical details

N-Channel 500V 2A 5W Surface Mount SOT-223

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