REASUNOS RS28N50W

REASUNOS · FETs & Power MOSFETs · MPN RS28N50W

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Specifications

Gate Charge(Qg)22nC@10V
Drain to Source Voltage500V
Current - Continuous Drain(Id)28A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation120W
RDS(on)140mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)32pF
Number1 N-channel
Input Capacitance(Ciss)4.295nF

Technical details

N-Channel 500V 28A 120W Through Hole TO-247-3

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