REASUNOS RS2301E

REASUNOS · FETs & Power MOSFETs · MPN RS2301E

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Specifications

Gate Charge(Qg)3.3nC@2.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)2.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))400mV
Pd - Power Dissipation350mW
RDS(on)70mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)55pF
Number1 P-Channel
Input Capacitance(Ciss)405pF

Technical details

P-Channel 20V 2.3A 0.35W Surface Mount SOT-23

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