REASUNOS RS20N90DK

REASUNOS · FETs & Power MOSFETs · MPN RS20N90DK

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)36nC@4.5V
Output Capacitance(Coss)395pF
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation42W
RDS(on)3.5mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)360pF
Number1 N-channel
Input Capacitance(Ciss)3.158nF

Technical details

20V 90A 1.1V 42W 3.5mΩ@4.5V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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