REASUNOS RS20N90D

REASUNOS · FETs & Power MOSFETs · MPN RS20N90D

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Specifications

Gate Charge(Qg)27nC@10V
Drain to Source Voltage20V
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))650mV
Pd - Power Dissipation80W
Reverse Transfer Capacitance (Crss@Vds)350pF
RDS(on)3.7mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)4.8nF

Technical details

N-Channel 20V 90A 80W Surface Mount TO-252

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