REASUNOS RS20N65F

REASUNOS · FETs & Power MOSFETs · MPN RS20N65F

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Specifications

Gate Charge(Qg)80nC@520V
Drain to Source Voltage650V
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation62W
Reverse Transfer Capacitance (Crss@Vds)24.8pF
RDS(on)350mΩ
Number1 N-channel
Input Capacitance(Ciss)2.071nF

Technical details

N-Channel 650V 20A 62W Through Hole TO-220F

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