REASUNOS RS20N60D

REASUNOS · FETs & Power MOSFETs · MPN RS20N60D

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)23nC@4.5V
Output Capacitance(Coss)278pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))900mV
Pd - Power Dissipation38W
RDS(on)6.2mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)252pF
Number1 N-channel
Input Capacitance(Ciss)2.007nF

Technical details

20V 60A 38W Surface Mount TO-252

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