REASUNOS RS20N50S

REASUNOS · FETs & Power MOSFETs · MPN RS20N50S

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Specifications

Gate Charge(Qg)49nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)292pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation173W
RDS(on)270mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)10.5pF
Number1 N-channel
Input Capacitance(Ciss)2.707nF

Technical details

N-Channel 500V 20A 173W Surface Mount TO-263

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