REASUNOS RS20N50F

REASUNOS · FETs & Power MOSFETs · MPN RS20N50F

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Specifications

Gate Charge(Qg)49nC@400V
Drain to Source Voltage500V
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation39W
Reverse Transfer Capacitance (Crss@Vds)10.5pF
RDS(on)210mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.707nF

Technical details

N-Channel 500V 20A 39W Through Hole TO-220F

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