REASUNOS RS20N50D

REASUNOS · FETs & Power MOSFETs · MPN RS20N50D

No reviews yet — be the first to review REASUNOS RS20N50D.

Specifications

Drain to Source Voltage20V
Gate Charge(Qg)18nC@4.5V
Current - Continuous Drain(Id)50A
Output Capacitance(Coss)225pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation31W
Reverse Transfer Capacitance (Crss@Vds)200pF
RDS(on)6mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.6nF

Technical details

20V 50A 1V 31W 6mΩ@4.5V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs