REASUNOS RS20N50BF

REASUNOS · FETs & Power MOSFETs · MPN RS20N50BF

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Specifications

Drain to Source Voltage500V
Gate Charge(Qg)64nC@10V
Output Capacitance(Coss)283pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation98W
RDS(on)230mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)9pF
Number1 N-channel
Input Capacitance(Ciss)3.294nF
TypeN-Channel

Technical details

500V 20A 4V 98W 230mΩ@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS

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