REASUNOS RS20N100D

REASUNOS · FETs & Power MOSFETs · MPN RS20N100D

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)64nC@10V
Output Capacitance(Coss)820pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation53W
Reverse Transfer Capacitance (Crss@Vds)720pF
RDS(on)2.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.21nF
TypeN-Channel

Technical details

20V 100A 1.3V 53W 2.1mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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