REASUNOS RS18N50F

REASUNOS · FETs & Power MOSFETs · MPN RS18N50F

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Specifications

Gate Charge(Qg)39.5nC@400V
Drain to Source Voltage500V
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation39W
Reverse Transfer Capacitance (Crss@Vds)5.5pF
RDS(on)280mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.415nF

Technical details

N-Channel 500V 18A 39W Through Hole TO-220F

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