REASUNOS RS18N50BF

REASUNOS · FETs & Power MOSFETs · MPN RS18N50BF

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Specifications

Drain to Source Voltage500V
Gate Charge(Qg)56nC@10V
Current - Continuous Drain(Id)18A
Output Capacitance(Coss)240pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation82W
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)280mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.798nF
TypeN-Channel

Technical details

500V 18A 4V 82W 280mΩ@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS

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