REASUNOS RS16N65S

REASUNOS · FETs & Power MOSFETs · MPN RS16N65S

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Specifications

Gate Charge(Qg)74nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation165W
RDS(on)550mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)29pF
Number1 N-channel
Input Capacitance(Ciss)2.063nF

Technical details

N-Channel 650V 16A 165W Surface Mount TO-263

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