REASUNOS RS16N65BF

REASUNOS · FETs & Power MOSFETs · MPN RS16N65BF

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)16A
Output Capacitance(Coss)208pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation81W
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)450mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.857nF
TypeN-Channel

Technical details

650V 16A 4V 81W 450mΩ@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS

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