REASUNOS RS16N50S

REASUNOS · FETs & Power MOSFETs · MPN RS16N50S

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Specifications

Gate Charge(Qg)56nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)226pF
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation54W
RDS(on)400mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)31pF
Number1 N-channel
Input Capacitance(Ciss)1.796nF

Technical details

N-Channel 500V 16A 54W Surface Mount TO-263

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