REASUNOS RS150N160S

REASUNOS · FETs & Power MOSFETs · MPN RS150N160S

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)68nC@10V
Output Capacitance(Coss)530pF
Current - Continuous Drain(Id)160A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation425W
Reverse Transfer Capacitance (Crss@Vds)4.3nF
RDS(on)5.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.5pF

Technical details

150V 160A 4.5V 425W 5.2mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS

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