REASUNOS RS150N100T

REASUNOS · FETs & Power MOSFETs · MPN RS150N100T

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Specifications

Gate Charge(Qg)85.2nC@10V
Drain to Source Voltage150V
Current - Continuous Drain(Id)100A
Output Capacitance(Coss)365pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation188W
RDS(on)9mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)8.3pF
Number1 N-channel
Input Capacitance(Ciss)2.195nF

Technical details

150V 100A 4.5V 188W 9mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS

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