REASUNOS RS13N65F

REASUNOS · FETs & Power MOSFETs · MPN RS13N65F

No reviews yet — be the first to review REASUNOS RS13N65F.

Specifications

Gate Charge(Qg)62nC@520V
Drain to Source Voltage650V
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)520mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.779nF

Technical details

N-Channel 650V 13A 45W Through Hole TO-220F

Related FETs & Power MOSFETs