REASUNOS RS13N50F

REASUNOS · FETs & Power MOSFETs · MPN RS13N50F

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Specifications

Gate Charge(Qg)30.9nC@400V
Drain to Source Voltage500V
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation49W
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)390mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.569nF

Technical details

N-Channel 500V 13A 49W Through Hole TO-220F

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