REASUNOS RS13N50BF

REASUNOS · FETs & Power MOSFETs · MPN RS13N50BF

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Specifications

Gate Charge(Qg)42nC@10V
Drain to Source Voltage500V
Current - Continuous Drain(Id)13A
Output Capacitance(Coss)188pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation96W
Reverse Transfer Capacitance (Crss@Vds)8pF
RDS(on)360mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.038nF
TypeN-Channel

Technical details

500V 13A 4V 96W 360mΩ@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS

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