REASUNOS RS11N45F

REASUNOS · FETs & Power MOSFETs · MPN RS11N45F

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Specifications

Drain to Source Voltage450V
Gate Charge(Qg)21nC@10V
Current - Continuous Drain(Id)11A
Output Capacitance(Coss)70pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation45W
RDS(on)490mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)25pF
Number1 N-channel
Input Capacitance(Ciss)750pF

Technical details

450V 11A 4V 45W 490mΩ@10V 1 N-channel TO-220F Single FETs, MOSFETs RoHS

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