REASUNOS · FETs & Power MOSFETs · MPN RS10N80F
No reviews yet — be the first to review REASUNOS RS10N80F.
| Gate Charge(Qg) | 57nC@640V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 44W |
| Reverse Transfer Capacitance (Crss@Vds) | 34pF |
| RDS(on) | 1Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.519nF |
N-Channel 800V 10A 44W Through Hole TO-220F