REASUNOS · FETs & Power MOSFETs · MPN RS10N50F
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| Gate Charge(Qg) | 20.5nC@400V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 48W |
| RDS(on) | 660mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 1.2pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.11nF |
N-Channel 500V 10A 48W Through Hole TO-220F