REASUNOS RS100N85G

REASUNOS · FETs & Power MOSFETs · MPN RS100N85G

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)42.2nC@10V
Current - Continuous Drain(Id)85A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation76W
RDS(on)6mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)78pF
Number1 N-channel
Input Capacitance(Ciss)2.362nF

Technical details

N-Channel 100V 85A 76W Surface Mount DFN5x6-8

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