REASUNOS RS100N78T

REASUNOS · FETs & Power MOSFETs · MPN RS100N78T

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Specifications

Gate Charge(Qg)38.5nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)78A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation78W
RDS(on)8.2mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)28pF
Number1 N-channel
Input Capacitance(Ciss)2.018nF

Technical details

100V 78A 78W Through Hole TO-220

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