REASUNOS · FETs & Power MOSFETs · MPN RS100N60G
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 41.8nC@10V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 63W |
| RDS(on) | 7.5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.122nF |
100V 60A 63W Surface Mount DFN5x6