REASUNOS RS100N60G

REASUNOS · FETs & Power MOSFETs · MPN RS100N60G

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)41.8nC@10V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation63W
RDS(on)7.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)25pF
Number1 N-channel
Input Capacitance(Ciss)2.122nF

Technical details

100V 60A 63W Surface Mount DFN5x6

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