REASUNOS RS100N135T

REASUNOS · FETs & Power MOSFETs · MPN RS100N135T

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Specifications

Gate Charge(Qg)67nC@50V
Drain to Source Voltage100V
Current - Continuous Drain(Id)135A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation225W
Reverse Transfer Capacitance (Crss@Vds)27pF
RDS(on)4.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)3.95nF

Technical details

N-Channel 100V 135A 225W Through Hole TO-220

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