REASUNOS RS100N120S

REASUNOS · FETs & Power MOSFETs · MPN RS100N120S

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Specifications

Gate Charge(Qg)69nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)590pF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation178W
RDS(on)7.5mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)20pF
Number1 N-channel
Input Capacitance(Ciss)4.1nF

Technical details

100V 120A 178W Surface Mount TO-263

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