REASUNOS RS100N100T

REASUNOS · FETs & Power MOSFETs · MPN RS100N100T

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Specifications

Gate Charge(Qg)42nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation93W
RDS(on)7mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)78pF
Number1 N-channel
Input Capacitance(Ciss)2.362nF

Technical details

100V 100A 93W Through Hole TO-220

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