R+O S8050

R+O · Transistors (BJTs) · MPN S8050

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO25V
Emitter-Base Voltage VEBO5V
DC Current Gain120
Pd - Power Dissipation300mW
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))600mV
Operating Temperature-55℃~+150℃

Technical details

25V 120 1 NPN NPN 500mA SOT-23 Single Bipolar Transistors RoHS

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