R+O MMST5551

R+O · Transistors (BJTs) · MPN MMST5551

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO160V
Emitter-Base Voltage VEBO6V
DC Current Gain300
Pd - Power Dissipation200mW
Number1 NPN
typeNPN
Current - Collector(Ic)600mA
Operating Temperature-
Vce Saturation(VCE(sat))150mV

Technical details

Bipolar (BJT) Transistor NPN 160V 0.6A 300MHz 200mW Surface Mount SOT-323

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