R+O MMDT5401

R+O · Transistors (BJTs) · MPN MMDT5401

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO150V
DC Current Gain300
Pd - Power Dissipation200mW
typePNP
Current - Collector(Ic)200mA
Vce Saturation(VCE(sat))200mV
Operating Temperature-55℃~+150℃

Technical details

150V 300 PNP 200mA SOT-363 Single Bipolar Transistors RoHS

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