R+O MMDT2227

R+O · Transistors (BJTs) · MPN MMDT2227

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Specifications

Current - Collector Cutoff10nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO6V
DC Current Gain300
Pd - Power Dissipation200mW
Number1 NPN + 1 PNP
typeNPN+PNP
Current - Collector(Ic)600mA
Vce Saturation(VCE(sat))300mV
Operating Temperature-

Technical details

Bipolar (BJT) Transistor NPN+PNP 60V 0.6A 300MHz 0.2W Surface Mount SOT-363

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