R+O MMBT2907A

R+O · Transistors (BJTs) · MPN MMBT2907A

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Pd - Power Dissipation250mW
Configuration-
Number1 PNP
typePNP
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))400mV

Technical details

Bipolar (BJT) Transistor 60V 600mA 200MHz 250mW Surface Mount SOT-23

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