R+O LMUN5211T1G

R+O · Transistors (BJTs) · MPN LMUN5211T1G

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain60
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Input Resistor13kΩ
Resistor Ratio1.2
Number1 NPN (Pre-Biased)
Pd - Power Dissipation246mW

Technical details

50V 60 100mA 1 NPN (Pre-Biased) 246mW SOT-323 Single, Pre-Biased Bipolar Transistors RoHS

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