R+O · FETs & Power MOSFETs · MPN HX06N040SG
No reviews yet — be the first to review R+O HX06N040SG.
| Drain to Source Voltage | 60V |
|---|---|
| Configuration | - |
| Gate Charge(Qg) | 138nC@10V |
| Current - Continuous Drain(Id) | 110A |
| Output Capacitance(Coss) | 1.17nF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 56.8W |
| RDS(on) | 4mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 95pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.476nF |
60V 110A 2.8V 56.8W 4mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs RoHS