R+O · FETs & Power MOSFETs · MPN HW3407
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 6nC@5V |
| Current - Continuous Drain(Id) | 4.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 1.9W |
| RDS(on) | 55mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 61pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 470pF |
| Type | P-Channel |
30V 4.5A 1.5V 1.9W 55mΩ@10V 1 P-Channel P-Channel DFN-6(2x2) Single FETs, MOSFETs RoHS