R+O · FETs & Power MOSFETs · MPN HW2EP190S
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| Gate Charge(Qg) | 19.6nC@10V |
|---|---|
| Drain to Source Voltage | 25V |
| Current - Continuous Drain(Id) | 22A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 2W |
| RDS(on) | 19mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 167pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.204nF |
| Type | P-Channel |
25V 22A 1V 2W 19mΩ@10V 1 P-Channel P-Channel DFN-6(2x2) Single FETs, MOSFETs RoHS