R+O · FETs & Power MOSFETs · MPN HW2305
No reviews yet — be the first to review R+O HW2305.
| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 35nC@10V |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 650mV |
| Pd - Power Dissipation | 2.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 245pF |
| RDS(on) | 22mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.782nF |
| Type | P-Channel |
20V 20A 650mV 2.2W 22mΩ@4.5V 1 P-Channel P-Channel DFN-6(2x2) Single FETs, MOSFETs RoHS