R+O HW12P180S

R+O · FETs & Power MOSFETs · MPN HW12P180S

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Specifications

Drain to Source Voltage12V
Gate Charge(Qg)16nC@4.5V
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation3W
RDS(on)18mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)217pF
Number1 P-Channel
Input Capacitance(Ciss)1.865nF

Technical details

12V 12A 700mV 3W 18mΩ@4.5V 1 P-Channel DFN2020-6L Single FETs, MOSFETs RoHS

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