R+O HW02N130S

R+O · FETs & Power MOSFETs · MPN HW02N130S

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)7nC@4.5V
Current - Continuous Drain(Id)8.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)115pF
RDS(on)14.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)782pF
TypeN-Channel

Technical details

20V 8.7A 700mV 1.6W 14.5mΩ@4.5V 1 N-channel N-Channel DFN-6(2x2) Single FETs, MOSFETs RoHS

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