R+O · FETs & Power MOSFETs · MPN HW02N130S
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 7nC@4.5V |
| Current - Continuous Drain(Id) | 8.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 1.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 115pF |
| RDS(on) | 14.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 782pF |
| Type | N-Channel |
20V 8.7A 700mV 1.6W 14.5mΩ@4.5V 1 N-channel N-Channel DFN-6(2x2) Single FETs, MOSFETs RoHS