R+O HV3400

R+O · FETs & Power MOSFETs · MPN HV3400

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)17nC@10V
Current - Continuous Drain(Id)5.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))900mV
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)68pF
RDS(on)27mΩ@10V
Input Capacitance(Ciss)688pF
TypeN-Channel

Technical details

30V 5.8A 900mV 1.4W 27mΩ@10V N-Channel SOT-89 Single FETs, MOSFETs RoHS

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