R+O · FETs & Power MOSFETs · MPN HV10P3H6S
No reviews yet — be the first to review R+O HV10P3H6S.
| Gate Charge(Qg) | 19nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 3.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| RDS(on) | 200mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.31nF |
100V 2A 1.7V 3.5W 200mΩ@10V 1 P-Channel SOT-89 Single FETs, MOSFETs RoHS