R+O · FETs & Power MOSFETs · MPN HV10N1H0SG
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 4nC@10V |
| Output Capacitance(Coss) | 30pF |
| Current - Continuous Drain(Id) | 3.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.65V |
| Pd - Power Dissipation | 2W |
| RDS(on) | 86mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 210pF |
| Type | N-Channel |
N-Channel 100V 3.4A 2W Surface Mount SOT-89