R+O HV10N1H0SG

R+O · FETs & Power MOSFETs · MPN HV10N1H0SG

No reviews yet — be the first to review R+O HV10N1H0SG.

Specifications

Drain to Source Voltage100V
Gate Charge(Qg)4nC@10V
Output Capacitance(Coss)30pF
Current - Continuous Drain(Id)3.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.65V
Pd - Power Dissipation2W
RDS(on)86mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)2pF
Number1 N-channel
Input Capacitance(Ciss)210pF
TypeN-Channel

Technical details

N-Channel 100V 3.4A 2W Surface Mount SOT-89

Related FETs & Power MOSFETs