R+O HV10N03

R+O · FETs & Power MOSFETs · MPN HV10N03

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)113pF
RDS(on)18mΩ@10V
Input Capacitance(Ciss)761pF
TypeN-Channel

Technical details

30V 10A 1.5V 3W 18mΩ@10V N-Channel SOT-89 Single FETs, MOSFETs RoHS

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