R+O · FETs & Power MOSFETs · MPN HV04P320S
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| Gate Charge(Qg) | 30nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 8.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 3.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 115pF |
| RDS(on) | 32mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.38nF |
40V 8.5A 1.8V 3.1W 32mΩ@10V 1 P-Channel SOT-89 Single FETs, MOSFETs RoHS