R+O HV04P320S

R+O · FETs & Power MOSFETs · MPN HV04P320S

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Specifications

Gate Charge(Qg)30nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)8.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)115pF
RDS(on)32mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.38nF

Technical details

40V 8.5A 1.8V 3.1W 32mΩ@10V 1 P-Channel SOT-89 Single FETs, MOSFETs RoHS

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