R+O HV03P650S

R+O · FETs & Power MOSFETs · MPN HV03P650S

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)12nC@10V
Current - Continuous Drain(Id)5.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation2.6W
RDS(on)49mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)58pF
Number1 P-Channel
Input Capacitance(Ciss)548pF

Technical details

30V 5.3A 1.6V 2.6W 49mΩ@10V 1 P-Channel SOT-89 Single FETs, MOSFETs RoHS

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