R+O HT304N200S

R+O · FETs & Power MOSFETs · MPN HT304N200S

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Specifications

Gate Charge(Qg)22.9nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation1.1W
RDS(on)13mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)96pF@20V
Input Capacitance(Ciss)1.33nF@20V
TypeN-Channel

Technical details

40V 7A 1.6V 1.1W 13mΩ@10V N-Channel SOT-23-3L Single FETs, MOSFETs RoHS

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